Lead-free piezoelectric thin films of Mn-doped NaNbO3-BaTiO3 fabricated by chemical solution deposition

Lead-free piezoelectric thin films of NaNbO3-BaTiO3 were fabricated on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Perovskite NaNbO3-BaTiO3 single-phase thin films with improved leakage-current and ferroelectric properties were prepared at 650 degrees C by doping with a small amount of Mn. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO(3)-0.05BaTiO(3) thin films showed slim ferroelectric P-E hysteresis and field-induced strain loops at room temperature. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO(3)-0.05BaTiO(3) films showed remanent polarization values of 6.3 and 6.2 mu C/cm(2), and coercive field of 41 and 55 kV/cm, respectively. From the slope of the field-induced strain loop, the effective piezoelectric coefficient (d(33)) was found to be 40-60 pm/V. (C) 2009 Elsevier B.V. All rights reserved.