Journal
THIN SOLID FILMS
Volume 518, Issue 6, Pages 1621-1626Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.11.059
Keywords
MAX phase; Titanium carbide; Compound target; Physical vapor deposition; X-ray diffraction
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Funding
- Swedish National Graduate School in Materials Science
- Swedish Research Council (VR)
- VINN Excellence Center in Research & Innovation on Functional Nanostructured Materials (FunMAT)
- Kanthal AB
- Center for Application of Ion Beams to Materials Research under RITA [025646]
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Sputter deposition from a Ti2AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 degrees C, the Al content decreased from 22 at.% to 5 at.%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies >4 eV was detected. Co-sputtering with Ti yielded a film stoichiometry of 2:0.8:0.9 for Ti:Al:C, which enabled growth of Ti2AlC. These results indicate that an additional Ti flux balances the excess C and therefore provides for more stoichiometric Ti2AlC synthesis conditions. (C) 2009 Elsevier B.V. All rights reserved.
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