Journal
THIN SOLID FILMS
Volume 518, Issue 24, Pages 7398-7402Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.05.017
Keywords
GaN; Light-emitting diodes (LED); ZnO nanorods (ZNR); Chemical bath deposition (CBD)
Categories
Funding
- National Science Council of Taiwan [NSC 95-2221-E-005-132-MY3, NSC 96-2622-E-005-004-CC3, NSC 97-2120-M-009-001]
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ZnO nanorod arrays were effectively selective-grown on a p-type GaN:Mg layer through chemical bath deposition (CBD) at a low temperature hydrothermal synthesis (85 degrees C) with a ZnO seed layer. The 5 mu m-diameter hole-array patterns of the ZnO seed layer were grown on a p-type GaN:Mg layer in aqueous solution with a mercury lamp illumination. The diameter and the height of ZnO nanorods were measured as the values of 500 nm and 3 mu m, respectively. The growth orientation, surface morphology, and aspect ratio of the ZnO nanorods can be controlled and formed on the hole-array patterned ZnO seed layer. The peak wavelength of the photoluminescence spectrum was measured at 384 nm. (C) 2010 Elsevier B.V. All rights reserved.
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