Journal
THIN SOLID FILMS
Volume 518, Issue 8, Pages 1914-1919Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.07.129
Keywords
Iridium; Stacking faults; Ion beam assisted deposition (IBAD); Physical vapor deposition (PVD); Scanning tunneling microscopy (STM)
Categories
Funding
- Deutsche Forschungsgemeinschaft
Ask authors/readers for more resources
Homoepitaxy on Ir(111) at 350 K through physical vapor deposition without and with ion assistance is compared in a scanning tunneling microscopy study. During growth without ion assistance thin Ir films on Ir(111) rapidly develop stacking faults such that for films of more than 50 atomic layers thickness the majority of the film surface displays twins. Ion assistance with 100 eV Ar+ at normal incidence as well as with 500 eV Ar+ at grazing incidence both effectively suppress stacking fault formation and twinning in the growing film. The mechanisms of twin suppression are identified. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available