Journal
THIN SOLID FILMS
Volume 518, Issue 24, Pages 7233-7235Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.04.083
Keywords
Plasma-enhanced chemical vapor deposition; Amorphous silicon films; Thin-film solar cells
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Funding
- Helius Power Company
- National Science Council of the Republic of China [98-2221-E-451-003, 98-2622-E-451-001-cc3]
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High-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) is a widely applicable method of deposition over a large area at a high rate for fabricating silicon thin-film solar cells. This investigation presents the properties of hydrogenated amorphous silicon (a-Si:H) films and the preparation of highly-efficient p-i-n solar cells using an RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells on the properties and mechanism of growth of the a-Si:H thin films and the solar cells is studied. The a-Si:H thin films prepared under various deposition conditions have widely varying deposition rates, optical-electronic properties and microstructures. When the deposition parameters were optimized, amorphous silicon-based thin-film silicon solar cells with efficiency of 7.6% were fabricated by HF-PECVD. These results are very encouraging for the future fabrication of highly-efficient thin-film solar cells by HF-PECVD. (C) 2010 Elsevier B.V. All rights reserved.
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