Journal
THIN SOLID FILMS
Volume 518, Issue 11, Pages 2996-2999Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.10.131
Keywords
Lattice-matched buffer layer; GaN; Homologous series compounds; Reactive solid-phase epitaxial
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Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH3 source The epitaxial relationships are (0001)(GaN)//(0001)(IGZO)//(111)(YSZ) in out-of-plane and [11 (2) over bar0](GaN)//[11 (2) over bar0]IGZO//[1 (1) over bar0](YSZ) in in-plane. This is different from those reported for GaN on many oxide crystals, the In-plane orientation of GaN crystal lattice is rotated by 300 with respect to those of oxide substrates except for ZnO Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer. (C) 2009 Published by Elsevier B V
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