Journal
THIN SOLID FILMS
Volume 517, Issue 6, Pages 1958-1960Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.10.066
Keywords
Zinc oxide; X-ray diffraction; Sputtering; Doped semiconductors
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Funding
- U.S. Department of Energy [DE-FG02-06ER06-15]
- Cornell Center of Materials Research MRSEC [NSF DMR0520404]
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We have studied the effect of codoping ZnO with Al and In using composition spreads prepared by off-axis rf sputtering. We find a large improvement in the electrical conductivity of doped ZnO and attribute this to size compensation, as inferred by measuring the volume of the unit cell as a function of composition. Adding a small amount of In to Al-doped ZnO results in an increase in the fraction of Al dopant atoms that are activated, and the mobility remains high as well. Codoping allows for a higher conductivity than single-doping in films deposited at a modest temperature with no post annealing. (C) 2008 Elsevier B.V. All rights reserved.
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