Journal
THIN SOLID FILMS
Volume 518, Issue 5, Pages 1386-1389Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.09.093
Keywords
Transparent conductive oxide; ZnO:Ga; Ga-doped ZnO; Thermal stability; Optical mobility
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Influence of thermal annealing on electrical properties of GZO films has been studied by means of Hall effect measurements and optical characterization based on Drude model analysis for transmission and reflection spectra. Electrical resistivity increased with increasing annealing temperature. Changes of electrical properties were compared between air and N-2 gas atmosphere. Thermal stability in the air was worse compared to the N-2 gas atmosphere. Annealing at rather high temperature caused decrease in the Hall mobility and increase in optical mobility. The difference between the Hall mobility and the optical mobility was attributed to carrier scattering at grain boundaries. Three kinds of deposition method, ion plating using DC arc discharge, DC magnetron sputtering, and RF power superimposed DC magnetron sputtering were compared in terms of the thermal stability. (C) 2009 Elsevier B.V. All rights reserved.
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