Journal
THIN SOLID FILMS
Volume 517, Issue 19, Pages 5611-5615Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.01.189
Keywords
Aluminum induced crystallization; Polycrystalline silicon; Thin films; Raman spectroscopy; Scanning electron microscopy; Optical microscopy
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Funding
- Chinese National High Tech. 863 Program [2006AA03Z219]
- PCSIRT [IRT0534]
- Graduate Innovation Plan of Nanjing University of Aeronautics and Astronautics [BCXJ08-10]
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High quality polycrystalline silicon (poly-Si) thin films without Si islands were prepared by using aluminum-induced crystallization on glass substrates. Al and amorphous silicon films were deposited by vacuum thermal evaporation and radio frequency magnetron sputtering, respectively. The samples were annealed at 500 degrees C for 7 h and then Al was removed by wet etching. Scanning electron microscopy shows that there are two layers in the thin films. After the upper layer was peeled off, the lower poly-Si thin film was found to be of high crystalline quality. It presented a Raman peak at 521 cm(-1) with full width at a half maximum of 5.23 cm(-1), which is similar to c-Si wafer. (C) 2009 Elsevier B.V. All rights reserved.
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