Journal
THIN SOLID FILMS
Volume 517, Issue 19, Pages 5646-5652Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.02.076
Keywords
Si nanocrystal; Phosphorus; Doping; Solar cell
Categories
Funding
- Australian Research Council
- Stanford University Global Climate and Energy Project (GCEP)
- Endeavour International Postgraduate Research Scholarship (EIPRS)
Ask authors/readers for more resources
Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 degrees C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available