Cu2O thin films deposited by reactive direct current magnetron sputtering

The Cu2O thin films were prepared on quartz substrate by reactive direct current magnetron sputtering. The influences of oxygen partial pressure and gas flow rate on the structures and properties of deposited films were investigated. Varying oxygen partial pressure leads to the synthesis Of Cu2O, Cu4O3 and CuO with different microstructures. At a constant oxygen partial pressure of 6.6 x 10(-2) pa, the single Cu2O films can be obtained when the gas flow rate is below 80 sccm. The as-deposited Cu2O thin films have a very high absorption in the visible region resulting in the visible-light induced photocatalytic activity. (C) 2009 Elsevier B.V. All rights reserved.