Journal
THIN SOLID FILMS
Volume 517, Issue 24, Pages 6853-6856Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.06.032
Keywords
Non-vacuum; Spin-coating; Solar cell; Photovoltaics; Hydrazine; CuInSSe
Categories
Funding
- National Science Foundation
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A low-temperature (similar to 350 degrees C) solution-processed CuInSSe photovoltaic cell is reported. The CuInSSe film was solution-deposited via spin-coating from a precursor solution consisting of metal chalcogenides (Cu2S and In2Se3) dissolved in hydrazine (N2H4). X-ray diffraction data indicated a full conversion from the hydrazine precursor to CuInSxSe2-x structure at 350 degrees C with an average crystallite size of approximately 45 nm. Bandgap tuning of the CuInSxSe2-x was achieved by varying the excess amount of sulfur in the precursor solution. Based on the (220) reflection of the XRD pattern, the bandgap of CuInSxSe2-x ranged from 1.00 to 1.14 eV. Standard testing conditions at 1-sun intensity resulted in a power conversion efficiency of 7.43%. Published by Elsevier B.V.
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