Journal
THIN SOLID FILMS
Volume 517, Issue 20, Pages 5813-5818Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.02.135
Keywords
Bismuth molybdate film; Photoelectrochemical properties; Visible light; Crystal structure; X-ray diffraction; Optical spectroscopy; Chemical solution deposition
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Funding
- Chinese National Science Foundation [20837001, 20673065, 50778172]
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Bismuth molybdate films with various phase structures including alpha-Bi2Mo3O12, beta-Bi2Mo2O9, gamma-Bi2MoO6, and gamma'-Bi2MoO6 are fabricated on the indium-tin oxide glass substrates from an amorphous heteronuclear complex via the dip-coating method by appropriate adjustment of the reaction conditions. alpha-Bi2Mo3O12, beta-Bi2Mo2O9, and gamma-Bi2MoO6 film can be obtained at 400 degrees C, 500 degrees C, and 500 degrees C for 1 h, respectively. At 500 degrees C, gamma'-Bi2MoO6 can be obtained for 4 h. Film formation process is proposed based on the experimental results. Thin gamma'-Bi2MoO6 films exhibit high photoresponse under visible light irradiation. incident photon to current conversion efficiency of thin gamma'-Bi2MoO6 film starts to increase near 450 nm. And, it can reach 4.1% at 400 nm. The top of the valence band and bottom of the conduction band are roughly estimated to be -0.71 and 1.69 ev, respectively. In contrast, gamma'-Bi2MoO6 generated weak photocurrent; alpha-Bi2Mo3O12 and beta-Bi2Mo2O9 film has no photoresponse under visible light irradiation. The reason for the difference in the visible light response was discussed. (C) 2009 Published by Elsevier B.V.
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