Journal
THIN SOLID FILMS
Volume 517, Issue 2, Pages 967-971Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.184
Keywords
Resistance random access memory; Cuprous oxide; Resistive switching; X-ray diffraction; Electrical measurements and properties; X-ray photoelectron spectroscopy; Sputtering deposition
Categories
Funding
- Korea Science and Engineering Foundation (KOSEF)
- Polymer Gel Cluster group of the Korea government
- POSTECH Core Research Program
- Korea Evaluation Institute of Industrial Technology (KEIT) [B0008557] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6A1906] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Single phase cuprous oxide (Cu2O) thin films were deposited on TiN substrate with radio frequency sputtering. Cu2O was used as a target material without oxygen to avoid the formation Of Cu2O and CuO mixture which was formed in copper oxidation or when using Cu target along with Ar and O-2. Single phase cuprous oxide was confirmed with X-ray diffraction and X-ray photoelectron spectroscopy measurements. Typical growth rate of Cu2O thin film was 14 nm/min under the optimized process condition. Cu2O thin films were thermally stable up to 250 degrees C, while the phase separation occurred above 350 degrees C, Fundamental properties Of Cu2O thin films such as resistivity, mobility, and dielectric constant were obtained. Current-voltage characteristics of Pt/Cu2O/TiN-based structure showed two stable resistance states through the double voltage sweep between -2 V and +2 V. The electrical properties of this structure were described well with space charge-limited conduction mechanism and the full energy-band structure of Cu2O film was obtained. (C) 2008 Elsevier B.V. All rights reserved.
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