Journal
THIN SOLID FILMS
Volume 517, Issue 3, Pages 1032-1036Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.06.030
Keywords
Transparent oxide semiconductors; ZnO thin films; Sn doping; Sol-gel method
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Funding
- National Science Council of Republic of China [NSC 96-2221-13-035-055-MY3]
- Taiwan TFT-LCD Association (TTLA) [A643TT1000-S21]
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In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sri doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 degrees C for 10 min and then annealed in air at 500 degrees C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10(2) Omega-cm. (C) 2008 Elsevier B.V All rights reserved.
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