Journal
THIN SOLID FILMS
Volume 517, Issue 1, Pages 101-104Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.031
Keywords
Finfet; SEG; GIDL
Categories
Funding
- European Commission [IST-026828]
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This work will focus on the use of Selective Epitaxial Growth (SEG) of Si and SiGe in multi-gate devices. We will demonstrate the necessity of using SEG in the processing of these narrow fin devices. Reductions of the source/drain resistance and Gate Induced Drain Leakage (GIDL) are the main advantages of using SEG. Although the use of SiGe SEG has little impact as mobility booster in narrow fin pMOS devices, it provides a significant reduction in contact resistance. (C) 2008 Elsevier B.V. All rights reserved.
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