Journal
THIN SOLID FILMS
Volume 516, Issue 12, Pages 3965-3970Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.07.190
Keywords
nanocrystalline silicon; infrared spectroscopy; Raman spectroscopy; transmission electron microscopy; electrical properties and measurements
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The structural changes in intrinsic silicon thin films are investigated as a function of the total pressure (2 to 4 Pa) and substrate temperature (room temperature to 200 degrees C). Infrared absorption, Raman spectroscopy and high resolution transmission electron microscopy are applied to characterize the films. The results indicate that the films grown at 2 Pa are completely amorphous, while at 3 and 4 Pa, crystallization occurs at temperature as low as room temperature. These structural changes are well correlated to the variation of the room temperature conductivity, which increases up to about eight orders of magnitude for the nanocrystallized films. A crystalline volume fraction varying from 71 to about 90% is also observed. The growth mechanism of the nanocrystalline films is also discussed in the framework of the reported models. (c) 2007 Elsevier B.V. All rights reserved.
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