Journal
THIN SOLID FILMS
Volume 516, Issue 11, Pages 3665-3668Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.08.042
Keywords
nanobelts; beta-Bi2O3; vapor-solid process; MOCVD
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We synthesized beta-Bi2O3 nanobelts on silicon substrates without using a metal catalyst. Trimethylbismuth and O-2 were taken as the source of bismuth and oxygen, respectively. X-ray diffraction and transmission electron microscopy studies confirmed the formation of tetragonal Bi2O3 phase. The typical width of the beta-Bi2O3 nanobelts was in the range of 40-400 nm. We suggested that the growth of beta-Bi2O3 nanobelts was mainly controlled by a vapor-solid mechanism. Photoluminescence measurements at room temperature exhibited a visible light emission band peaking at around 2.81 eV. (c) 2007 Elsevier B.V. All rights reserved.
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