Journal
THIN SOLID FILMS
Volume 517, Issue 1, Pages 191-196Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.090
Keywords
Spintronics; Intermetallic ferromagnetic compound; Spin injection; Tunnel effect through Schottky barrier
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Epitaxial Mn5Ge3/Ge(111) heterostructures were grown by Solid Phase Epitaxy (SPE) method, which consists of a room temperature Mn deposition followed by thermal annealing. It is shown that upon annealing at a temperature of about similar to 430-450 degrees C, the Mn5Ge3 phase is formed and it is stable up to similar to 850 degrees C. This phase is the unique epitaxial phase observed on the Ge(111) substrate. Transmission electron diffraction (TED) patterns confirm that the hexagonal basal (001) plan of Mn5Ge3 is parallel to the (111) plan of the Ge substrate and cross-sectional transmission electronic microscopy (TEM) analyses reveal a relatively smooth interface at the atomic scale. Magnetic characterizations indicate that epitaxial Mn5Ge3 films present a strong ferromagnetism up to room temperature. However, in contrast to bulk Mn5Ge3 material which has uniaxial anisotropy along the c axis, epitaxial Mn5Ge3 films exhibit easy axis of magnetization lying in the hexagonal basal (001) plane, parallel to the interface between the Mn5Ge3 films and the substrate. (c) 2008 Published by Elsevier B.V.
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