Journal
JOURNAL OF THE CHILEAN CHEMICAL SOCIETY
Volume 60, Issue 2, Pages 2911-2913Publisher
SOC CHILENA QUIMICA
DOI: 10.4067/S0717-97072015000200010
Keywords
Graphene; Cupric Oxide; CVD
Categories
Funding
- CONICYT [FONDECYT 11110522]
- Air Force Office of Scientific Research (USA) [FA9550-13-1-006]
- ANILLO [ACT 1204]
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Few-layer graphene was grown by Chemical Vapor Deposition on a CuO thin film pre-deposited by sputtering on SiO2/Si substrates using acetylene as the carbon source. After evaporation of metal, graphene lies directly in contact with the SiO2 dielectric layer. Raman spectroscopy was used to confirm the presence of a single and/or few-layers of graphene. This procedure does not requiring any post processing to transfer the thin film onto a dielectric substrate or the use of ultra-high vacuum during synthesis.
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