4.0 Article

Generation of propagation-invariant light beams from semiconductor light sources

Journal

TECHNICAL PHYSICS LETTERS
Volume 34, Issue 12, Pages 1075-1078

Publisher

MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063785008120262

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Funding

  1. Royal Society (UK)
  2. Government of St. Petersburg

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We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178A degrees and 170A degrees, which provided beams with a central spot diameter of 100 and 10 mu m, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 mu m) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

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