Journal
TECHNICAL PHYSICS
Volume 58, Issue 5, Pages 735-743Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063784213050125
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Funding
- SENER-CONACYT Foundation, Mexico [152244]
- DGAPA-UNAM Foundation, Mexico [IN102511]
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Experimental data for the variation of the work function on the Si and GaAs semiconductor surfaces irradiated by cesium ions are presented. The formation mechanism of CsM+ cluster ions (M is the analyte) is considered. Ionization potentials for some CsM molecules are calculated, and a simple experimental technique to determine the concentration of cesium penetrating into the subsurface region of various materials during cesium ion sputtering is suggested. This technique uses a preimplanted potassium as an internal standard..
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