Journal
SYNTHETIC METALS
Volume 187, Issue -, Pages 113-117Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2013.11.002
Keywords
Polymer solar cell; Inverted type solar cell; Self-assembled monolayer; Electron transporting layer; Interface dipole; Morphology
Funding
- Converging Research Center Program through the Ministry of Education, Science and Technology [2013K000195]
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2013-020225]
- National Research Foundation of Korea [22A20130012608, 2010-50177, 2011-0006807, 2010-0021332] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The work function and the surface property of ZnO can be simply tuned by the self-assembled monolayer (SAM) treatment derived from benzoyl chloride such as 4-fluorobenzoyl chloride (FBC) and 4-tert-butyl benzoyl chloride (BBC). The work function of FBC treated ZnO is 4.75 eV, which is larger than that of untreated ZnO (4.55 eV). This is due to the formation of unfavorable interface dipole, which is shifted away from the ZnO surface. SAM treated ZnO is used as an electron collection layer for inverted polymer solar cells (iPSCs) with a structure of ITO/ZnO/SAM/active layer (P3HT:PC61BM)/WO3/Ag. Therefore, the open circuit voltage (V-oc) of the device based on FBC treated ZnO is 0.53 V. which is smaller than that of the device based on bare ZnO (0.58V) and BBC treated ZnO (0.58V). The power conversion efficiency (PCE) of iPSC with FBC treated ZnO is 1.78%, which is smaller than that that of the device with untreated ZnO. The short circuit current (J(sc)), the PCE, and the fill factor (FF) of the device with BBC treated ZnO are -9.00 mA/cm(2), 2.90%, and 55.6%, respectively, which are higher than those of the device with untreated ZnO (-8.63 mA/cm(2), 2.51%, and 50.2%). Enhancement of the J(sc) and FF in the device with BBC treated ZnO are achieved by SAM treatment leading to the reduction of a Schottky barrier at the interface and improvement of morphology of the active layer. (C) 2013 Elsevier B.V. All rights reserved.
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