Journal
SYNTHETIC METALS
Volume 160, Issue 9-10, Pages 1126-1129Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2010.02.017
Keywords
Organic semiconductor; n-Type doping; Energetic disorder; p-i-n structure
Funding
- Department of Science and Technology (DST)
- Council of Scientific and Industrial Research (CSIR), New Delhi, India
Ask authors/readers for more resources
Efficient n-type doping has been achieved by doping Liq in electron transport material Alq(3). Detailed investigation of current density-voltage characteristics of electron only devices with different doping concentrations of Liq in Alq(3) has been performed. An increase in current density by two orders of magnitude has been achieved with 33 wt% of Liq doped in Alq(3). Organic light emitting diode with p-i-n structure was fabricated using F-4-TCNQ doped alpha-NPD as hole transport layer, Ir(ppy)(3) doped CBP as emitting layer and 33 wt% Liq doped Alq(3) as electron transport layer. Comparison of OLEDs fabricated using undoped Alq(3) and 33 wt% Liq doped Alq(3) as electron transport layer shows reduction in turn on voltage from 5 to 2.5 V and enhancement of power efficiency from 5.8 to 10.61m/W at 5 V. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available