Chemical etchant dependence of surface structure and morphology on GaN(0001) substrates

We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN (0001)2 x 2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HE and subsequent annealing at similar to 550 degrees C but was not achieved by etching in HCI, NaOH. and HNO3. (C) 2010 Elsevier B.V. All rights reserved.