Journal
SURFACE SCIENCE
Volume 604, Issue 15-16, Pages 1247-1253Publisher
ELSEVIER
DOI: 10.1016/j.susc.2010.04.004
Keywords
GaN; Scanning tunneling microscopy; Low-energy electron diffraction; Reflection high-energy electron diffraction; Surface structure; HF; Wet cleaning
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) Japan
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We studied the procedure of cleaning GaN(0001) substrate surfaces by wet etching and subsequent annealing in ultrahigh vacuum for two different types of freestanding GaN wafers: hydride vapor phase epitaxy (HVPE) crystal and Na flux liquid phase epitaxy (LPE) crystal wafers. A flat surface containing GaN (0001)2 x 2 reconstruction was successfully achieved on both HVPE and LPE surfaces by etching in HE and subsequent annealing at similar to 550 degrees C but was not achieved by etching in HCI, NaOH. and HNO3. (C) 2010 Elsevier B.V. All rights reserved.
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