Journal
SURFACE SCIENCE
Volume 604, Issue 3-4, Pages 318-321Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2009.11.023
Keywords
Low-pressure Metal-Organic Vapor Phase; Epitaxy; InAs/GaAs quantum dots; Reflectance anisotropy spectroscopy; Surface reconstruction
Categories
Funding
- Czech Science Foundation [202/09/0676]
- Czech Academy of Sciences [IAA 100100719]
- Institute of Physics AVOZ [10100521]
Ask authors/readers for more resources
The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for Stranski-Krastanow quantum dot (QD) formation. TMIn dosage and waiting time following InAs deposition during which QD formation takes place were optimized. RAS measurement helps us to study the MOVPE surface processes such as QD formation, dissolution of In from InAs QDs during the growth of GaAs capping layer or recovery of epitaxial surface from As deficiency, when As partial pressure is increased. We have shown, that the recovery of epitaxial surface from As deficiency is rather a slow process of the order of tens of seconds. We have for the first time observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available