4.4 Article

N incorporation, composition and electronic structure in N-doped TiO2(001) anatase epitaxial films grown on LaAlO3(001)

Journal

SURFACE SCIENCE
Volume 602, Issue 1, Pages 133-141

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2007.09.061

Keywords

molecular beam epitaxy; photochemistry; titanium oxide; single crystal epitaxy; semiconducting films

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We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(0 0 1) substrates. Phase-pure epitaxial films in which N substitutes for 0 with no secondary phase formation nucleate only over a narrow range of fluxes. N substitution for 0 results in N 2p derived states off the top of the anatase valence band and the associated red shift in the optical bandgap. (C) 2007 Published by Elsevier B.V.

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