Journal
SURFACE AND INTERFACE ANALYSIS
Volume 44, Issue 11-12, Pages 1507-1510Publisher
WILEY-BLACKWELL
DOI: 10.1002/sia.4987
Keywords
thermoelectric semiconductor; oxide; wurtzite; ZnO; dopant; Ga2O3; Al2O3
Categories
Funding
- Energy Efficiency and Resources of KETEP RD Program [2008EID11P060000]
- Fundamental R&D Program for Core Technology of Materials [K0006007]
- Ministry of Knowledge Economy, Korea
- Korea Evaluation Institute of Industrial Technology (KEIT) [2008EID11P060000] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Thermoelectric oxides have been regarded as promising materials for power generation especially at high temperature. Among them, ZnO systems have been reported as useful n-type thermoelectrics because of high Seebeck coefficients and electrical conductivities at high temperature. In this study, we investigated polycrystalline ZnO systems doped with different donor ions Al3+ and Ga3+. We investigated reasons of different solution limits and secondary phases and microstructures between these two donor-doped cases. Thermoelectric properties also showed different tendency between Al3+- and Ga3+-doped ZnO systems because of their different structural properties. As a result, a maximum power factor value 9.18 x 10-4 W/mK2 at 1050 K was obtained in Zn0.98Ga0.02O composition. Copyright (C) 2012 John Wiley & Sons, Ltd.
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