Journal
SURFACE & COATINGS TECHNOLOGY
Volume 231, Issue -, Pages 563-566Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2012.07.039
Keywords
Indium tin oxide (ITO); Transparent-RRAM (TRRAM); Oxygen content
Funding
- J. P. Lin in Nanya Technology Corporation
- M. J. Tsai, P. S. Chen and H. Y. Lee in the Electronics and Optoelectronics Research Laboratory of Industrial Technology Research Institute
- National Sciences Council [NSC 97_2221_E_182005]
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In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
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