Ion beam induced modification in GeOx thin films: A phase separation study

Formation of Ge crystallites in GeOx matrix as a result of heavy ion irradiation is reported. Micro-Raman spectra of the films show the evolution of Ge crystallite regions in GeOx thin films upon ion irradiation with 100 MeV Au. Transmission electron microscopic studies of the irradiated films revealed the presence of Ge crystallites. Crystallinity of the Ge nanoparticles was confirmed by high-resolution electron microscope images. Atomic force microscopy was employed to study the modifications in surface morphology of GeOx films before and after irradiation. Formation of Ge nanocrystallites has been explained on the basis of phenomenon of ion beam induced phase separation. (C) 2009 Elsevier B.V. All rights reserved.