Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 58, Issue -, Pages 144-153Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2013.03.012
Keywords
ZnO nanoparticles; Polymer; Heterojunction; Ambipolar OTFTs; Thin film; Morphology
Categories
Funding
- SFUMATO project (Fonds Unique Interministeriel)
- SUNFLOWER project [FP7-ICT-2011-7]
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Solution-processed n-channel oxide semiconductor thin-film transistors (TFTs) were fabricated using zinc oxide (ZnO) nanoparticles. Polycrystalline fused-ZnO nanoparticle films were produced by spin-coating ZnO nanosphere dispersions following by a subsequent heat treatment. The solution-processable semiconductor ink based on ZnO was prepared by dispersing the synthesized ZnO nanospheres in isopropanol mixed with ethanolamine to various concentrations from 20 to 80 mg/mL. Such concentration dependence on morphology and microstructure of thin films was studied on spin-coated ZnO films by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Spin-coated ZnO films involved as active layers in transistor configuration delivered an almost ideal output characteristic (I-d-V-d) with an electron mobility up to 3 x 10(-2) cm(2)/V s. As a p-channel semiconductor, a poly(3-hexylthiophene) (P3HT) solution-processable ink was deposited by spin-coating on top of closely packed ZnO nanoparticles-based films to form an uniform overlying layer. A hybrid (inorganic-organic) interface was formed by the direct contact between ZnO and P3HT leading to carrier redistribution. Such solution-processed hybrid thin-film transistors delivered in air well balanced electron and hole mobilities as 3.9 x 10(-5) and 2 x 10(-5) cm(2)/V s, respectively. (C) 2013 Elsevier Ltd. All rights reserved.
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