Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 60, Issue -, Pages 257-262Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2013.05.004
Keywords
Gallium oxide; Nitrogen incorporated; Annealing atmosphere; Transmittance; Band gap
Categories
Funding
- National Natural Science Foundation of China [61240015]
- Natural Science Foundation of Guangdong Province [S2012010010030]
- Basic Research Plan Program of Shenzhen City [JCYJ20120613134210982, JCYJ20120615101957810]
- Natural Scientific Research Innovation Foundation in Harbin Institute of Technology [HIT.NSFIR.2011123]
Ask authors/readers for more resources
N-incorporated Ga2O3 films were deposited on sapphire substrates by radio frequency magnetron sputtering. Annealing treatments for the as-deposited samples were performed in nitrogen, oxygen and air at 800 degrees C, respectively. The effect of annealing atmosphere on the structure, morphology and transmittance of the as-deposited films was investigated. X-ray diffraction (XRD) patterns of the as-deposited and annealed films exhibited monocline crystal structure with a strong (-402) preferred crystallographic planes. Annealing atmosphere greatly affected the surface morphology and transmittance of N-incorporated Ga2O3 films. Annealing in nitrogen exhibited excellent crystallinity, smooth surface and higher transmittance in visible range. Moreover, the red shift of the band gap was observed after annealing. (C) 2013 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available