4.5 Article

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Journal

SUPERLATTICES AND MICROSTRUCTURES
Volume 57, Issue -, Pages 123-128

Publisher

ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2013.02.006

Keywords

Amorphous oxide semiconductors (AOSs); Lanthanum-zinc-tin-oxides (LZTOs); Thin-film transistors; Active layer thickness; Dip coating

Funding

  1. National Natural Science Foundation of China [61071005, 61136004]
  2. Doctoral Foundation of Ministry of Education of China [20110071110010]

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The dependence of the electrical properties of amorphous lanthanum-zinc-tin-oxides (a-LZTOs)-based top-gate thin-film transistors (TFTs) on active layer thicknesses (d(T)) is investigated. It is found that the on-to-off current ratio (I-on/off) of TFT improved with the thickness of LZTO active layer decreased from 84 nm to 32 nm, whereas the saturation mobility and the subthreshold swing of device degraded. The improvement in I-on/off is attributed to the decrease in off-current of TFT due to an increase in resistance of the very thin LZTO film. Moreover, the deterioration in properties of device with the thin active layer is associated with the trap states incorporated in TFT and interface scattering effect. (C) 2013 Elsevier Ltd. All rights reserved.

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