Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 60, Issue -, Pages 67-72Publisher
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2013.04.013
Keywords
Band-to-band tunneling (BTBT); Graphene nanoribbon field effect transistor (GNRFET); Lightly doped drain and source (LDDS); Nonequilibrium Green's function (NEGF); Power-delay product (PDP) parameter; Subthreshold-swing (SS)
Categories
Ask authors/readers for more resources
In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon (GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between intrinsic channel region and highly doped source and drain regions. By using a nonequilibrium Green's function (NEGF) method, the transport characteristics of LDDS-GNRFET in comparison to those of conventional GNRFET are investigated. According to simulation results, LDDS-GNRFET with proper doping in LDDS regions, demonstrates much less leakage current, larger ON-OFF ratio (I-on/I-off), better subthreshold-swing (SS), no ambipolar characteristic, and better switching parameters. These advantages represent the proposed structure as a suitable candidate for low-power and highspeed applications. (c) 2013 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available