4.5 Article

Optical, electrical, and structural properties of ZrON/Ag/ZrON multilayer transparent conductor for organic photovoltaics application

Journal

SUPERLATTICES AND MICROSTRUCTURES
Volume 62, Issue -, Pages 119-127

Publisher

ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2013.07.009

Keywords

ZrON; Ag; Transparency; Dielectric/metal/dielectric; Photovoltaic

Funding

  1. World Class University program through the National Research Foundation of Korea
  2. MEST [R33-2008-000-10025-0]
  3. Ministry of Education, Science & Technology (MoST), Republic of Korea [R33-2008-000-10025-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigated the electrical and optical properties of chemically stable nitride-based ZrON/Ag/ZrON multilayers for use in organic photovoltaics. As the ZrON layer thickness increases, the carrier concentration smoothly decreases and the transmission window region becomes wider and gradually shifts toward the lower energy-side. The optical bandgap also decreases with decreasing carrier concentration. The ZrON/Ag/ZrON samples exhibit somewhat lower transmittance in the region of similar to 400-800 nm than the ITO/Ag/ITO samples. The aging test shows that the resistivity of the ZrON/Ag/ZrON samples remains almost the same even after aging for 1 month in air. It is shown that the ZrON/Ag interface is more chemically stable than the ITO/Ag interface. Simulation results exhibit that the ZnPc:C60 bulk hetero-junction organic solar cells fabricated with the ZrON(30 nm)/Ag/ZrON(70 nm) layers give a short circuit current of 9.54 mA/cm(2), which is comparable to that (10.54 mA/cm(2)) of the cells with 90-nm-thick ITO electrodes. The ZrON/Ag/ZrON samples experienced a large shift in the absorption edge. This behavior is explained in terms of the material characteristics of the ZrON layers and the higher refractive index of the ZrON/Ag/ZrON samples. (C) 2013 Elsevier Ltd. All rights reserved.

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