4.5 Article

Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

Journal

SUPERCONDUCTOR SCIENCE & TECHNOLOGY
Volume 21, Issue 12, Pages -

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IOP PUBLISHING LTD
DOI: 10.1088/0953-2048/21/12/122001

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LaFeAsO(1-x)F(x) thin films were deposited successfully on (001)-oriented LaAlO(3) and MgO substrates from stoichiometric LaFeAsO(1-x)F(x) polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11 K. mu(0)H(c2)(T) was determined by resistive measurements and yield mu(0)H(c2) values of 3 T at 3.6 K for mu(0)H parallel to c and 6 T at 6.4 K for mu(0)H parallel to ab.

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