Journal
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
Volume 83, Issue 1, Pages 614-617Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.saa.2011.08.009
Keywords
TiO2-SiO2; Composites; Sol-gel; MOS capacitor; I-V, C-V
Categories
Funding
- Department of Information Technology (DIT), Government of India
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Titanium dioxide (TiO2) and silicon dioxide (SiO2) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO2 and SiO2 respectively. The pure and composite films of TiO2 and SiO2 were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO2 and SiO2 sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO2 films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.
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