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Reconfigurable nanowire electronics - A review

Journal

SOLID-STATE ELECTRONICS
Volume 102, Issue -, Pages 12-24

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2014.06.010

Keywords

Reconfigurable transistor; Polarity control; Ambipolar; Nanowire FET; Doping-free CMOS; Universal FET

Funding

  1. Deutsche Forschungsgemeinschaft (DFG) [WE 4853/1-2, MI 1247/6-2]

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Reconfigurable nanowire transistors merge the electrical properties of unipolar n-and p-type FETs into a single type of device with identic technology, geometry and composition. These four-terminal nanowire transistors employ an electric signal to dynamically program unipolar n-or p-type behavior. More than reducing the technological complexity, they open up the possibility of dynamically programming the functions of circuits at the device level, i.e. enabling a fine-grain reconfiguration of complex functions. We will review different reconfigurable concepts, analyze the transport properties and finally assess their maturity for building circuits. (C) 2014 Elsevier Ltd. All rights reserved.

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