Journal
SOLID-STATE ELECTRONICS
Volume 102, Issue -, Pages 12-24Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2014.06.010
Keywords
Reconfigurable transistor; Polarity control; Ambipolar; Nanowire FET; Doping-free CMOS; Universal FET
Funding
- Deutsche Forschungsgemeinschaft (DFG) [WE 4853/1-2, MI 1247/6-2]
Ask authors/readers for more resources
Reconfigurable nanowire transistors merge the electrical properties of unipolar n-and p-type FETs into a single type of device with identic technology, geometry and composition. These four-terminal nanowire transistors employ an electric signal to dynamically program unipolar n-or p-type behavior. More than reducing the technological complexity, they open up the possibility of dynamically programming the functions of circuits at the device level, i.e. enabling a fine-grain reconfiguration of complex functions. We will review different reconfigurable concepts, analyze the transport properties and finally assess their maturity for building circuits. (C) 2014 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available