Journal
SOLID-STATE ELECTRONICS
Volume 89, Issue -, Pages 93-100Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2013.07.005
Keywords
Phase-Change Memory (PCM); Germanium Telluride (GeTe); Ge-rich; Te-rich
Funding
- CATRENE REFINED Project
Ask authors/readers for more resources
In this paper we provide a detailed physical and electrical characterization of Germanium Telluride compounds (GexTe100-x) targeting phase-change memory applications. Thin films of Germanium-rich as well as Tellurium-rich phase-change materials are deposited for material analysis (XRD, resistivity and optical characterization). GexTe100-x compounds are then integrated in lance-type analytical phase-change memory devices allowing for a thorough analysis of the switching characteristics, data retention and endurance performances. Tellurium-rich GeTe alloys exhibit stable programming characteristics and can sustain endurance up to 10(7) cycles, while Germanium-rich compounds show an unstable RESET state during repeated write/erase cycles, probably affected by Ge segregation. Finally we demonstrate that data retention is strongly improved departing from Ge50Te50 stoichiometric composition. (C) 2013 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available