Journal
SOLID-STATE ELECTRONICS
Volume 79, Issue -, Pages 11-13Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.06.014
Keywords
Hot-electrons; Device reliability; Defect generation
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Hot-carrier effects in gated AlGaN/GaN based high electron mobility transistors are studied by microwave noise temperature spectroscopy. Electron temperature profiles are measured and correlated to defect generation in the AlGaN/GaN channel interface. It is found that new defects are created at the AlGaN/GaN interface due to hot-electrons which are fairly well confined to the channel under the gated part. (C) 2012 Elsevier Ltd. All rights reserved.
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