Journal
SOLID-STATE ELECTRONICS
Volume 79, Issue -, Pages 138-141Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.07.020
Keywords
Phase change material; Ge2Sb2Te5; Nitrogen doping; Electrical switching
Funding
- National Key Basic Research Program of China [2011CBA00607, 2010CB934300, 2011CB932800]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61076121]
- Science and Technology Council of Shanghai [1052nm07000]
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Nitrogen-doped Ge2Sb2Te5 thin film is proposed to present the feasibility for electrical phase-change memory application. The effect of nitrogen doping on the structure is studied by in situ sheet resistance measurement and X-ray diffraction method. The temperature upon crystallization from amorphous to cubic structure is increased by nitrogen addition, while the phase transformation to hexagonal phase occurs at a lower temperature compared with the nitrogen-free Ge2Sb2Te5 material. The X-ray diffraction test reveals that the grain size has been refined significantly by the incorporation of nitrogen atoms in the film. Phase-change memory device based on nitrogen incorporated Ge2Sb2Te5 material is fabricated using complementary metal oxide semiconductor technology. A complete crystallization of the phase-change cell is realized in the current-voltage sweeping process. Nitrogen-doped Ge2Sb2Te5 with higher sheet resistance in the crystalline state is favored for phase-change memory application due to the decreased reset voltage and promoted resistance ratio of the reset and set states. (C) 2012 Elsevier Ltd. All rights reserved.
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