Journal
SOLID-STATE ELECTRONICS
Volume 75, Issue -, Pages 43-47Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.05.007
Keywords
SrTiO3 thin films; Resistive switching; Electrical transport; Variable range hopping; Space charge limited conduction
Funding
- National Research Foundation of Korea [2009-0092809]
- National Foundation of Science and Technology Development of Vietnam [NAFOSTED - 103.99-2010.12]
- National Research Foundation of Korea [2009-0092809] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study examined the electrical conduction of Cr-doped SrTiO3 thin films in a metal (Pt)-insulator-metal (La0.5Sr0.5CoO3) structure. Two DC transport mechanisms, variable range hopping and the trap-controlled space-charge-limited current conduction, were found to be responsible for the conduction behavior. Resistance switching mechanism involved the trapping/detrapping of injected carriers at the weakly localized states. (C) 2012 Elsevier Ltd. All rights reserved.
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