Journal
SOLID-STATE ELECTRONICS
Volume 67, Issue 1, Pages 53-62Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2011.07.015
Keywords
Graphene; Transistor; Small-signal model
Funding
- Office of Naval Research
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In this letter, a small-signal model for the graphene-based field effect transistor based on a physical description of the device's operation is presented. The small-signal model contains circuit elements similar to classical small-signal models for field effect transistors but these elements differ vastly in their behavior with bias, owing to the different physical behavior of these devices. Intrinsic and extrinsic small-signal models are presented. The high-frequency performance of the models in terms of short-circuit current gain and Mason's unilateral gain, and associated frequency figures-of-merit, are examined. Published by Elsevier Ltd.
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