Journal
SOLID-STATE ELECTRONICS
Volume 72, Issue -, Pages 38-43Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2012.02.009
Keywords
Heterostructure field-effect transistors; Multi-MgxNy/GaN buffer; Photo-CVD SiO2
Funding
- National Science Council [NSC 97-2221-E-168-051-MY3, NSC 100-2221-E-168-030]
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We report the fabrication of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-MgxNy/GaN as an epitaxial buffer and using SiO2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneously for surface passivation and as gate insulator. High quality SiO2 dielectric was successfully deposited onto AlGaN by Photo-CVD compared with the traditional plasma enhanced chemical vapor deposition (PE-CVD). Compared to conventional AlGaN/GaN HFET, the MOS-HFET with Photo-CVD SiO2 exhibits lower leakage current, higher breakdown voltage and channel current. It was also observed that our MOS-HFETs presented pure 1/f noise with smaller trapping effects and improved immunity to the RF current collapse. (c) 2012 Elsevier Ltd. All rights reserved.
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