Journal
SOLID-STATE ELECTRONICS
Volume 57, Issue 1, Pages 23-30Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.10.005
Keywords
Tunneling FET; Band-to-band tunneling; TCAD simulation; Modeling
Funding
- National Research Foundation (NRF) of Singapore [NRF-RF2008-09]
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A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation or its device physics. (C) 2010 Elsevier Ltd. All rights reserved.
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