Journal
SOLID-STATE ELECTRONICS
Volume 56, Issue 1, Pages 111-115Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.11.009
Keywords
GaN; Device; MOS-HEMT; Scaling; Short channel
Funding
- National Science Foundation [EEC-9731677]
- Furukawa Electric Co.
- SRC
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In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (DIBL) is quantitatively evaluated. A specific on-resistance of 2.1 m Omega cm(2) has been projected for a MOS channel length of 0.38 mu m. We also have assessed the impact of high-k gate dielectrics, such as Al(2)O(3). In addition, we have found that adding a thin GaN cap layer on top of AlGaN barrier can help reducing short channel effects. (C) 2010 Elsevier Ltd. All rights reserved.
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