Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 11, Pages 1447-1450Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.07.002
Keywords
ZnO; Thin film; Doping; Sputtering; Transparent conductive oxide
Funding
- Ministry of Education, Science and Technology [2009-0093706]
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Al-doped ZnO (AZO) films were deposited on glass substrates by pulsed DC sputtering technique with various working pressures in the range of 1-15 mTorr. A relationship between the morphological. mechanical and electrical properties of sputtered AZO films was studied as a function of sputtering pressure. The sputtered films were highly c-axis oriented. The n-type conductivity in AZO films was observed due to the substitutional doping of Al. AZO films deposited at 3 mTorr have shown an electrical resistivity of 2.2 x 10(-4) Omega cm and high transmittance in visible range with better mechanical properties. For higher sputtering pressures an increase in the resistivity was observed due to a decrease in the mobility and the carrier concentration. The lower sputtering pressure was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices. (C) 2010 Elsevier Ltd. All rights reserved.
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