Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 12, Pages 1578-1581Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2010.07.006
Keywords
Terahertz; TUNNETT; Molecular layer epitaxy (MLE); Patch antenna
Funding
- Tohoku University MEXT Japan
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Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 x 440 mu m patch antenna was coupled with the GaAs TUNNETT diode for cavity less sub-terahertz (THz) oscillators The obtained sub terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35 3 dBm at 197 GHz under a bias current of 550 mA (C) 2010 Elsevier Ltd All rights reserved
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