Journal
SOLID-STATE ELECTRONICS
Volume 53, Issue 6, Pages 644-648Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2009.04.007
Keywords
Non-volatile memory; Flash memory; EEPROM; Single-poly-silicon; Fowler-Nordheim tunnelling; Reliability; Endurance; Data retention
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We present a novel single-poly-silicon EEPROM cell for embedded memory. The cell is integrated in a 0.13 mu m RF-CMOS technology without process modifications and is composed of an NMOS transistor and a MOS capacitor on two isolated P-wells sharing a floating poly-silicon layer. A two-polarity voltage of +/- 6 V is applied for writing and erasing using uniform-channel Fowler-Nordheim tunnelling. Operations faster than 1 ms, endurance over 10(+3) cycles and data retention longer than 10 years are demonstrated. (C) 2009 Elsevier Ltd. All rights reserved.
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