Journal
SOLID STATE SCIENCES
Volume 13, Issue 11, Pages 2007-2010Publisher
ELSEVIER
DOI: 10.1016/j.solidstatesciences.2011.09.002
Keywords
Copper (II) oxide; Dielectrics; Maxwell-Wagner polarization; Dielectric response; Annealing
Funding
- Thailand Research Fund (TRF)
- Thailand Graduate Institute of Science and Technology (TGIST)
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The effect of heat treatments on the electrical responses of the electrode and surface layer in a giant-permittivity CuO ceramic is investigated. It is found that the giant low-frequency relative permittivity of the CuO ceramic can be tuned by annealing in Ar and O-2 it can be reduced by annealing in Ar, and then it can be enhanced up to the initial value by annealing in O-2. The results indicate to the effect of oxygen vacancy concentration on the giant dielectric properties of the CuO ceramic. Interestingly, three sets of dielectric relaxations are observed in the O-2-annealed sample, which can be assigned as the effects of outmost surface layer, electrode, and grain boundary. Our results reveal that the giant low-frequency dielectric response in the CuO ceramic is associated with both of the interfacial polarization at the sample electrode interface resulted from a non-Ohmic electrode contact and the outmost surface layer-inner part interface. (C) 2011 Elsevier Masson SAS. All rights reserved.
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